EFFECTS OF SUBSTRATE MATERIALS AND THEIR PROPERTIES ON PHOTOASSISTED METALORGANIC VAPOR-PHASE EPITAXY OF ZNSE

被引：12

作者：

OKAMOTO, T

YOSHIKAWA, A

机构：

[1] Department of Electrical and Electronics Engineering, Chiba University, Chiba-shi, Chiba, 260

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 2A期

关键词：

PHOTOASSISTED MOVPE; LASER-CVD; PHOTOCATALYSIS; ZNSE; II-VI COMPOUNDS;

D O I：

10.1143/JJAP.30.L156

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of substrate materials and their properties on photoassisted MOVPE of ZnSe using DMZn and DMSe as reactants have been investigated. For GaAs substrates, the presence of a thin predeposited ZnSe buffer layer and its quality greatly affect the subsequent film growth. However, for InP substrates, no essential effect of the buffer layer has been observed. Furthermore, in both substrates, the conduction type makes no significant difference to the results of photoassisted MOVPE. These results can be interpreted by a proposed growth model in which photoinduced excess holes in the ZnSe layer contribute to the film growth.

引用

收藏

页码：L156 / L159

页数：4

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