FABRICATION OF HIGH-EFFICIENCY N+-P JUNCTION INP SOLAR-CELLS BY USING GROUP VIB ELEMENT DIFFUSION INTO P-TYPE INP

被引：11

作者：

YAMAMOTO, A

YAMAGUCHI, M

UEMURA, C

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 12期

关键词：

D O I：

10.1109/T-ED.1985.22416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2780 / 2786

页数：7

共 12 条

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[9] ELECTRON-IRRADIATION DAMAGE IN RADIATION-RESISTANT INP SOLAR-CELLS [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (03) :302-307

[10] IMPURITY CONCENTRATION EFFECTS ON RADIATION DEFECT INTRODUCTION IN INP EXAMINED BY INSITU MEASUREMENT [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (10) :L788-L790

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