EFFECT OF SURFACE TREATMENT ON SURFACE RECOMBINATION VELOCITY AND DIODE LEAKAGE CURRENT IN GAP

被引：36

作者：

STRINGFELLOW, GB ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.569018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：908 / 913

页数：6

共 12 条

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