DISORDER PRODUCTION AND ANNEALING DURING HE ION RBS/CHANNELLING ANALYSIS OF INP

被引：3

作者：

HE, ZT ^{[1
]}

CARTER, G ^{[1
]}

机构：

[1] UNIV SALFORD,THIN FILM & SURFACE RES CTR,SALFORD M5 4WT,LANCS,ENGLAND

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1983年 / 77卷 / 1-2期

关键词：

D O I：

10.1080/00337578308224726

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：97 / 105

页数：9

共 21 条

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[17] AN ALTERNATIVE METHOD FOR THE DECHANNELLING CORRECTION IN CHANNELLING-BACKSCATTERING EXPERIMENTS [J].

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[18] SEMIEMPIRICAL METHOD OF APPLYING DECHANNELING CORRECTION IN EXTRACTION OF DISORDER DISTRIBUTION [J].

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[19] DAMAGE PRODUCTION AT THE SURFACE OF SI SINGLE-CRYSTALS BY 200 KEV HE+ BOMBARDMENT [J].

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[20]

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