A HIGHLY-SENSITIVE DRY DEVELOPABLE RESIST

被引：5

作者：

TSUDA, M ^{[1
]}

OIKAWA, S ^{[1
]}

YABUTA, M ^{[1
]}

YOKOTA, A ^{[1
]}

NAKANE, H ^{[1
]}

机构：

[1] TOKYO OHKA KOGYO CO LTD,SAMUKAWA,KANAGAWA 25301,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 02期

关键词：

D O I：

10.1143/JJAP.23.259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：259 / 264

页数：6

共 14 条

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[6] A PRINCIPLE FOR THE FORMULATION OF PLASMA DEVELOPABLE RESISTS AND THE IMPORTANCE OF DRY DEVELOPMENT OF SUB-MICRON LITHOGRAPHY
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YOKOTA, A
HIJIKATA, I
UEHARA, A
NAKANE, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02): : 259 - 261
[7] MECHANISM OF DRY DEVELOPMENT AND DRY ETCH RESISTANCE OF RESIST
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 135 - 140
[8] TSUDA M, 1983, PHOTOGR SCI ENG, V27, P118
[9] HIGH-REMAINING DRY-DEVELOPED RESIST PATTERNS OF STEEP PROFILE
TSUDA, M
YOKOTA, A
KASHIWAGI, K
YABUTA, M
OIKAWA, S
KANAI, W
NAKANE, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (07): : 1215 - 1220
[10] NOVEL PLASMA DEVELOPABLE RESIST COMPOSITIONS AND PERFORMANCE OF TOTAL DRY MICROFABRICATIONS IN SUB-MICRON LITHOGRAPHY
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OIKAWA, S
KANAI, W
HASHIMOTO, K
YOKOTA, A
NUINO, K
HIJIKATA, I
UEHARA, A
NAKANE, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1351 - 1357

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