THERMOPHYSICAL PROPERTIES OF LOW-RESIDUAL STRESS, SILICON-RICH, LPCVD SILICON-NITRIDE FILMS

被引：78

作者：

MASTRANGELO, CH ^{[1
]}

TAI, YC ^{[1
]}

MULLER, RS ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 23卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(90)87046-L

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：856 / 860

页数：5

共 8 条

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[6] THERMAL-CONDUCTIVITY OF HEAVILY DOPED LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE SILICON FILMS [J].

TAI, YC ;

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