ATOMIC CONFIGURATION OF HYDROGENATED AND CLEAN SI(110) SURFACES

被引：81

作者：

AMPO, H ^{[1
]}

MIURA, S ^{[1
]}

KATO, K ^{[1
]}

OHKAWA, Y ^{[1
]}

TAMURA, A ^{[1
]}

机构：

[1] WASEDA UNIV,DEPT APPL PHYS,TOKYO 160,JAPAN

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.34.2329

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2329 / 2335

页数：7

共 23 条

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[18] CHEMISORPTION OF ATOMIC-HYDROGEN ON SILICON (111)7X7 SURFACE
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[19] CHEMISORPTION OF ATOMIC-HYDROGEN ON SILICON (110) 5 BY 1 SURFACE (UPS AND LEED)
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[J]. PHYSICS LETTERS A, 1976, 56 (03) : 204 - 206
[20] THE SI (100) SURFACE - SYMMETRIC OR ASYMMETRIC DIMERS
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[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (06) : 755 - 758

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