HIGH-SENSITIVITY INP-BASED MONOLITHICALLY INTEGRATED PIN HEMT RECEIVER OEIC FOR 10 GB/S

被引：13

作者：

KUEBART, W

REEMTSMA, JH

KAISER, D

GROSSKOPF, H

BESCA, F

LUZ, G

KORBER, W

GYURO, I

机构：

[1] ALCATEL SEL, RES CTR, OPTOELECTR PACKAGING GRP, D-70435 STUTTGART, GERMANY

[2] ALCATEL SEL, RES CTR, DIV OPTOELECTR COMPONENTS, D-70435 STUTTGART, GERMANY

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1995年 / 43卷 / 09期

关键词：

D O I：

10.1109/22.414577

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP-based pin-HEMT receiver-OEIC's with different circuit layouts for bit rates up to 10 Gb/s are simulated, realized and chararterized. The circuits under investigation are a high impedance amplifier, a common-gate circuit, and a transimpedance-cascode circuit. The high frequency behavior of all circuits is compared by means of on wafer-characterization. All circuits show a bandwidth of more than 5 GHz, the transimpedance circuit has the highest responsivity (12.9 dB A/W) and a very low average noise current of 11.5 pA/root Hz when assembled in a module. The receiver sensitivity of the transimpedance circuit in the module is measured to be as high as -19.2 dBm.

引用

页码：2334 / 2341

页数：8

共 16 条

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