EL2 AND ANION ANTISITE DEFECTS IN PLASTICALLY DEFORMED GAAS

被引：11

作者：

HOFMANN, DM ^{[1
]}

MEYER, BK ^{[1
]}

SPAETH, JM ^{[1
]}

WATTENBACH, M ^{[1
]}

KRUGER, J ^{[1
]}

KISIELOWSKIKEMMERICH, C ^{[1
]}

ALEXANDER, H ^{[1
]}

机构：

[1] UNIV COLOGNE,INST PHYS 2,MET PHYS ABT,W-5000 COLOGNE 41,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 07期

关键词：

D O I：

10.1063/1.346341

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on optical absorption its magnetic circular dichroism (MCD), optically detected electron spin-resonance (ODESR), and electron nuclear double-resonance (ODENDOR) investigations of plastically deformed semi-insulating GaAs. By plastic deformation arsenic antisite defects are created which show a similar ODESR pattern as EL2 defects present in the material prior to deformation. EL2 and the new antisite defects can be distinguished by their different spectral dependence of the MCD. The new antisite defect formation starts at 2% deformation and is investigated as a function of the degree of deformation; additional EL2 defects are not created. With ODENDOR it is shown that the atomistic structure of the EL2 defects changes in the deformed GaAs.

引用

页码：3381 / 3385

页数：5

共 22 条

[1] MAGNETO-OPTICAL STUDIES OF ATOMIC THALLIUM CENTERS IN KCL - MAGNETIC CIRCULAR-DICHROISM TAGGED BY SPIN-RESONANCE [J].

AHLERS, FJ ;

LOHSE, F ;

SPAETH, JM ;

MOLLENAUER, LF .

PHYSICAL REVIEW B, 1983, 28 (03) :1249-1255

[2]

BARDELEBEN HJ, 1988, REV PHYS APPL, V23, P727

[3] METASTABILITY OF THE ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2187-2190

[4] THEORETICAL EVIDENCE FOR AN OPTICALLY INDUCIBLE STRUCTURAL TRANSITION OF THE ISOLATED AS ANTISITE IN GAAS - IDENTIFICATION AND EXPLANATION OF EL2 [J].

DABROWSKI, J ;

SCHEFFLER, M .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2183-2186

[5] MECHANISM FOR THE CREATION OF ANTISITE DEFECTS, DURING COMBINED CLIMB-GLIDE MOTION OF DISLOCATIONS IN SPHALERITE-STRUCTURE CRYSTALS [J].

FIGIELSKI, T .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 36 (04) :217-219

[6]

HOFMANN DM, 1987, THESIS U PADERBORN F

[7] STUDY OF DEFORMATION-PRODUCED DEEP LEVELS IN N-GAAS USING DEEP LEVEL TRANSIENT CAPACITANCE SPECTROSCOPY [J].

ISHIDA, T ;

MAEDA, K ;

TAKEUCHI, S .

APPLIED PHYSICS, 1980, 21 (03) :257-261

[8] PHOTORESPONSE OF THE FR3 ELECTRON-SPIN-RESONANCE SIGNAL IN GAAS [J].

KAUFMANN, U ;

WILKENING, W ;

BAEUMLER, M .

PHYSICAL REVIEW B, 1987, 36 (14) :7726-7729

[9] IDENTIFICATION OF A TRIGONAL CATION ANTISITE DEFECT IN GALLIUM-ARSENIDE [J].

KRAMBROCK, K ;

MEYER, BK ;

SPAETH, JM .

PHYSICAL REVIEW B, 1989, 39 (03) :1973-1976

[10] ENERGY-LEVELS AND PHOTO-QUENCHING PROPERTIES OF THE ARSENIC ANTI-SITE IN GAAS [J].

MEYER, BK ;

HOFMANN, DM ;

SPAETH, JM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (16) :2445-2451

← 1 2 3 →