INTERACTION OF DEEP-ULTRAVIOLET LASER-LIGHT WITH GAAS-SURFACES IN AQUEOUS-SOLUTIONS

被引:37
作者
PODLESNIK, DV
GILGEN, HH
WILLNER, AE
OSGOOD, RM
机构
关键词
D O I
10.1364/JOSAB.3.000775
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:775 / 784
页数:10
相关论文
共 36 条
[1]   OPTICAL-PROPERTIES OF GAAS AND ITS ELECTROCHEMICALLY GROWN ANODIC OXIDE FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
SCHWARTZ, GP ;
GUALTIERI, GJ ;
STUDNA, AA ;
SCHWARTZ, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :590-597
[2]   SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].
BLAKEMORE, JS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181
[3]   HOT CARRIER INJECTION AT SEMICONDUCTOR-ELECTROLYTE JUNCTIONS [J].
BOUDREAUX, DS ;
WILLIAMS, F ;
NOZIK, AJ .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2158-2163
[4]   EXPERIMENTS ON THE INTERFACE BETWEEN GERMANIUM AND AN ELECTROLYTE [J].
BRATTAIN, WH ;
GARRETT, CGB .
BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (01) :129-176
[5]  
CARDONA M, 1966, SEMICONDUCT SEMIMET, V3, P125
[6]   CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].
CASEY, HC ;
SELL, DD ;
WECHT, KW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257
[7]  
CONWELL EM, 1967, SOLID STATE PHYSIC S, V9, P155
[8]   IMPROVED PERFORMANCE OF GAAS MICROWAVE FIELD-EFFECT TRANSISTORS WITH LOW INDUCTANCE VIA-CONNECTIONS THROUGH SUBSTRATE [J].
DASARO, LA ;
DILORENZO, JV ;
FUKUI, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) :1218-1221
[9]  
GATOS HC, 1965, PROGR SEMICONDUCTORS, V9, P132
[10]  
Gerischer H., 1979, Solar energy conversion. Solid-state physics aspects, P115