X-RAY DIFFRACTION ANALYSES + ETCH PATTERNS OF FAULTS IN EPITAXIAL SILICON

被引：5

作者：

LAURIENTE, M

STICKLER, R

ARMSTRONG, RW

机构：

来源：

关键词：

D O I：

10.1063/1.1713173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3061 / &

共 11 条

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[3]

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NEWKIRK, JB .

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[5]

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[6]

NEWKIRK JB, 1962, DIRECT OBSERVATIO ED, P29

[7]

SCHULTZ JC, UNPUBLISHED

SCHULTZ, JM ;

WASHBURN, J .

[9]

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SCHWUTTKE, GH ;

SILS, V .