STRUCTURE STUDY OF AU-GAAS(001) INTERFACES BY HEIS, XPS, AND RHEED

被引：18

作者：

NARUSAWA, T

WATANABE, N

KOBAYASHI, KLI

NAKASHIMA, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期

关键词：

D O I：

10.1116/1.572440

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：538 / 541

页数：4

共 10 条

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[3]

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[6] VARIATION OF SCHOTTKY-BARRIER ENERGY WITH INTERDIFFUSION IN AU AND NI-AU-GE FILMS ON GAAS [J].

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[7] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT [J].

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[8]

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[9] INTERFACE CHEMISTRY OF METAL-GAAS SCHOTTKY-BARRIER CONTACTS [J].

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[10] ORIENTATION RELATIONSHIPS BETWEEN THIN-FILMS OF AU, (100) SUBSTRATES OF GAAS, AND THEIR REACTION-PRODUCTS [J].

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