ELECTRON-MICROSCOPIC STUDY OF ALLOYING BEHAVIOR OF AU ON GAAS

被引：32

作者：

KUMAR, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 04期

关键词：

Compendex;

D O I：

10.1143/JJAP.18.713

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Still and in-situ electron microscopic studies of the deposition and the alloying behavior of Au on GaAs have been made. Au was found to react with GaAs at -470°C forming new compound with composition very close to Au7Ga2 (and/or GaAu with Ga=21 at%). The higher alloying temperature and longer alloying time (-2–3 min. at 600°C) resulted in large size of the alloyed region. Asymmetric etching of the (001) GaAs surfaces during high temperature treatment was also observed to take place; this was attributed to the asymmetric nature of [110] and [110] directions on the (001) surfaces. © 1979 The Japan Society of Applied Physics.

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页码：713 / 716

页数：4

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