ELECTROMIGRATION STUDIES OF AL-INTERMETALLIC STRUCTURES

被引：9

作者：

KWOK, T ^{[1
]}

HO, PS ^{[1
]}

HUANG, HCW ^{[1
]}

机构：

[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期

关键词：

D O I：

10.1116/1.572732

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：241 / 242

页数：2

相关论文

共 4 条

[1] ELECTROMIGRATION IN THIN ALUMINUM FILMS ON TITANIUM NITRIDE
BLECH, IA
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1203 - 1208
[2] HO PS, 1982, 20TH IEEE P S REL PH, P292
[3] INTERMETALLIC COMPOUNDS OF AL AND TRANSITIONS METALS - EFFECT OF ELECTROMIGRATION IN 1-2-MUM-WIDE LINES
HOWARD, JK
WHITE, JF
HO, PS
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4083 - 4093
[4] EFFECT OF TEXTURE AND GRAIN-STRUCTURE ON ELECTROMIGRATION IN AL-0.5-PERCENT CU THIN-FILMS
VAIDYA, S
SINHA, AK
[J]. THIN SOLID FILMS, 1981, 75 (03) : 253 - 259