INFLUENCE OF HYDROGEN ON THE EVOLUTION OF STRUCTURAL-PROPERTIES OF AMORPHOUS-SILICON CARBIDE

被引：27

作者：

DELLAMEA, G

DEMICHELIS, F

PIRRI, CF

RAVA, P

RIGATO, V

STAPINSKI, T

TRESSO, E

机构：

[1] UNIV TRENTO, I-38050 TRENT, ITALY

[2] IST NAZL FIS NUCL LAB, LEGNANO, ITALY

[3] ELETTRORAVA SPA, SAVONERA, ITALY

[4] STANISLAW STASZIC UNIV MIN & MET, PL-30059 KRAKOW, POLAND

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80065-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Device-quality films of a-SiC:H deposited by glow-discharge and reactive sputtering have been subjected to annealing treatments in the range 200-800-degrees-C in order to study the influence of hydrogen on the evolution of their structural properties. IR, density, optical and electrical measurements contribute to identify the different phase transitions of the network.

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页码：95 / 98

页数：4

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