DISLOCATION CONFIGURATIONS AT INCLUSIONS IN GGG (GD-3GA-5O-12)

被引：5

作者：

BECKER, C

ZSOLDOS, E

WEBER, A

机构：

[1] HUNGARIAN ACAD SCI,CENT RES INST PHYS,BUDAPEST,HUNGARY

[2] DAWB,CENT INST SOLID STATE PHYS & MAT RES,DRESDEN,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 34卷 / 02期

关键词：

D O I：

10.1002/pssa.2210340213

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：519 / 523

页数：5

共 7 条

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[2] MECHANISM FOR DISLOCATION MULTIPLICATION AT PRECIPITATES OR INCLUSIONS IN CRYSTALS [J].

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[3] DISLOCATIONS IN GADOLINIUM GALLIUM GARNET (GD3GA5O12) .1. DISLOCATIONS AT INCLUSIONS [J].

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MENDEL, E .

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[4] DISLOCATIONS IN GADOLINIUM GALLIUM GARNET (GD3GA5O12) .1. DISLOCATIONS AT INCLUSIONS REPLY [J].

MATTHEWS, JW ;

KLOKHOLM, E ;

SADAGOPAN, V ;

PLASKETT, TS ;

MENDEL, E .

SCRIPTA METALLURGICA, 1973, 7 (07) :707-709

[5]

MATTHEWS JW, 1973, 18 P ANN C MAGN MAGN, P271

[6] PRECIPITATION IN HIGH-PURITY SILICON SINGLE CRYSTALS [J].

NES, E ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3562-&

[7] DISLOCATIONS IN GADOLINIUM GALLIUM GARNET (GD3 GA5 O12)- .1. DISLOCATIONS AT INCLUSIONS [J].

NES, E .

SCRIPTA METALLURGICA, 1973, 7 (07) :705-706

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