PICOSECOND DYNAMICS OF PHOTOEXCITED CARRIERS IN FREESTANDING POROUS SILICON

被引：14

作者：

TROJANEK, F ^{[1
]}

MALY, P ^{[1
]}

PELANT, I ^{[1
]}

HOSPODKOVA, A ^{[1
]}

KOHLOVA, V ^{[1
]}

VALENTA, J ^{[1
]}

机构：

[1] ACAD SCI CZECH REPUBL,INST PHYS,CR-16200 PRAGUE 6,CZECH REPUBLIC

来源：

THIN SOLID FILMS | 1995年 / 255卷 / 1-2期

关键词：

OPTICAL SPECTROSCOPY; SILICON;

D O I：

10.1016/0040-6090(94)05610-P

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the ultrafast dynamics of photoexcited carriers in luminescent free-standing porous silicon at room temperature using the experimental techniques of picosecond absorption and luminescence spectroscopy. Both the luminescence intensity and transient absorption signals show a fast decay on the scale of hundreds of picoseconds, followed by a slower nanosecond decay. We identify the faster component of the decay as being due to a bimolecular recombination process in the core of Si nanocrystallites with a quasi-direct gap energy structure (biomolecular recombination coefficient of 10(-10) cm(3) s(-1)), while the slower component is likely to be due to recombination via surface states.

引用

页码：77 / 79

页数：3

共 6 条

[1]

JUSKA G, 1993, J NONCRYST SOLIDS, V164, P579

[2]

KANEMITSU Y, 1993, MATER RES SOC S P, V283, P149

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APPLIED PHYSICS LETTERS, 1993, 63 (19) :2655-2657

[4] TRANSMISSION STUDY OF PICOSECOND PHOTOCARRIER DYNAMICS IN FREESTANDING POROUS SILICON [J].

MALY, P ;

TROJANEK, F ;

HOSPODKOVA, A ;

KOHLOVA, V ;

PELANT, I .

SOLID STATE COMMUNICATIONS, 1994, 89 (08) :709-712

[5] ULTRAFAST DECAY DYNAMICS OF LUMINESCENCE IN POROUS SILICON [J].

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KANEMITSU, Y .

PHYSICAL REVIEW B, 1993, 47 (20) :13876-13879

[6] PHOTODETECTORS FABRICATED FROM RAPID-THERMAL-OXIDIZED POROUS SI [J].

TSAI, CC ;

LI, KH ;

CAMPBELL, JC ;

TASCH, A .

APPLIED PHYSICS LETTERS, 1993, 62 (22) :2818-2820

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