TRANSMISSION STUDY OF PICOSECOND PHOTOCARRIER DYNAMICS IN FREESTANDING POROUS SILICON

被引：35

作者：

MALY, P ^{[1
]}

TROJANEK, F ^{[1
]}

HOSPODKOVA, A ^{[1
]}

KOHLOVA, V ^{[1
]}

PELANT, I ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, INST PHYS, CS-16200 PRAGUE, CZECH REPUBLIC

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 89卷 / 08期

关键词：

D O I：

10.1016/0038-1098(94)90582-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Pump and probe technique has been used to study time-resolved differential absorbance of free-standing porous silicon at room temperature. The second (532 nm) harmonics of a mode-locked Nd3+:YAG picosecond laser served as pump pulses and the fundamental frequency (1.06 mum) were used as probe pulses. Photocarrier dynamics shows a fast decay in time domain of hundred picoseconds. A model of bimolecular radiative recombination is suggested, the values of bimolecular radiative recombination coefficient B and excited carrier cross section sigma have been found to be B = 4 x 10(-10) cm3 s-1 and sigma = 9 x 10(-18) cm2, very close to the values reported for direct gap semiconductors.

引用

页码：709 / 712

页数：4

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