PHOTODETECTORS FABRICATED FROM RAPID-THERMAL-OXIDIZED POROUS SI

被引：41

作者：

TSAI, CC

LI, KH

CAMPBELL, JC

TASCH, A

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 22期

关键词：

D O I：

10.1063/1.109220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A metal-semiconductor-metal (MSM) photoconductor and a p-n photodiode have been fabricated from rapid-thermal-oxidized (RTO) porous Si. The MSM photoconductor achieved 2.8 X higher responsivity at 350 nm than a UV-enhanced Si photodiode, and the RTO photodiode exhibited an external quantum efficiency of 75% at 740 nm.

引用

页码：2818 / 2820

页数：3

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