ELECTROSTATIC FORCES BETWEEN METALLIC TIP AND SEMICONDUCTOR SURFACES

被引:94
作者
HUDLET, S [1 ]
SAINTJEAN, M [1 ]
ROULET, B [1 ]
BERGER, J [1 ]
GUTHMANN, C [1 ]
机构
[1] UNIV PARIS 07,PHYS SOLIDES GRP,CNRS,UA17,F-75261 PARIS,FRANCE
关键词
D O I
10.1063/1.358616
中图分类号
O59 [应用物理学];
学科分类号
摘要
Atomic force microscopy used in the resonant mode is a powerful tool for measuring local surface properties: for example, the quantitative analysis of the electrical forces induced by the application of an electric field between a conductive microscope tip and a surface allows the determination of the tip/surface capacitance and the local surface work function. However, these quantitative analyses require knowledge of tip geometry. In this article, we show that the simple procedure of evaluating the tip curvature radius by fitting the variations of the electrostatic force with the tip-surface distance is not always adapted to the case where one of the tip-surface system elements is a semiconductor. However, particular experimental conditions are determined to overcome these difficulties. © 1995 American Institute of Physics.
引用
收藏
页码:3308 / 3314
页数:7
相关论文
共 9 条
  • [1] LATERAL DOPANT PROFILING IN SEMICONDUCTORS BY FORCE MICROSCOPY USING CAPACITIVE DETECTION
    ABRAHAM, DW
    WILLIAMS, C
    SLINKMAN, J
    WICKRAMASINGHE, HK
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02): : 703 - 706
  • [2] ELECTROSTATIC AND CONTACT FORCES IN FORCE MICROSCOPY
    HAO, HW
    BARO, AM
    SAENZ, JJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02): : 1323 - 1328
  • [3] ELECTROSTATIC FORCES BETWEEN A METALLIC TIP AND SEMICONDUCTOR SURFACES
    HUDLET, S
    SAINTJEAN, M
    ROULET, B
    BERGER, J
    GUTHMANN, C
    [J]. JOURNAL DE PHYSIQUE I, 1994, 4 (11): : 1725 - 1742
  • [4] HIGH-RESOLUTION CAPACITANCE MEASUREMENT AND POTENTIOMETRY BY FORCE MICROSCOPY
    MARTIN, Y
    ABRAHAM, DW
    WICKRAMASINGHE, HK
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (13) : 1103 - 1105
  • [5] SURFACE INVESTIGATIONS WITH A KELVIN PROBE FORCE MICROSCOPE
    NONNENMACHER, M
    OBOYLE, M
    WICKRAMASINGHE, HK
    [J]. ULTRAMICROSCOPY, 1992, 42 : 268 - 273
  • [6] SZE SM, 1981, PHYSICS SEMICONDUCTO
  • [7] SEMICONDUCTOR CHARACTERIZATION BY SCANNING FORCE MICROSCOPE SURFACE PHOTOVOLTAGE MICROSCOPY
    WEAVER, JMR
    WICKRAMASINGHE, HK
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03): : 1562 - 1565
  • [8] HIGH-RESOLUTION ATOMIC FORCE MICROSCOPY POTENTIOMETRY
    WEAVER, JMR
    ABRAHAM, DW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03): : 1559 - 1561
  • [9] LATERAL DOPANT PROFILING WITH 200 NM RESOLUTION BY SCANNING CAPACITANCE MICROSCOPY
    WILLIAMS, CC
    SLINKMAN, J
    HOUGH, WP
    WICKRAMASINGHE, HK
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (16) : 1662 - 1664