EFFECT OF RUTHENIUM PASSIVATION ON THE OPTICAL AND ELECTRICAL-PROPERTIES OF GALLIUM ANTIMONIDE

被引：21

作者：

DUTTA, PS ^{[1
]}

RAO, KSRK ^{[1
]}

BHAT, HL ^{[1
]}

机构：

[1] SOLID STATE PHYS LAB,DELHI 110054,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 09期

关键词：

D O I：

10.1063/1.359407

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Improvements in optical and electrical properties were observed after ruthenium passivation of gallium antimonide surfaces. On passivation, luminescence efficiency increased up to 50 times and surface state density reduced by two orders of magnitude. Also, the reverse leakage current was found to decrease by a factor of 30-40 times. Increase in carrier mobility as a result of grain boundary passivation in polycrystalline GaSb was observed. © 1995 American Institute of Physics.

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页码：4825 / 4827

页数：3

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