SULFUR PASSIVATION OF GALLIUM ANTIMONIDE SURFACES

被引:57
作者
DUTTA, PS [1 ]
SANGUNNI, KS [1 ]
BHAT, HL [1 ]
KUMAR, V [1 ]
机构
[1] SOLID STATE PHYS LAB,DELHI 110054,INDIA
关键词
D O I
10.1063/1.112889
中图分类号
O59 [应用物理学];
学科分类号
摘要
Improvement in optical and electrical properties were observed after sulphur passivation of gallium antimonide surface. Enhancement of photoluminescence intensity up to 60 times, reduction in surface state density by two orders of magnitude, and reverse leakage currents by a factor of 20-30 were obtained as a result of surface passivation. While the reduction of surface recombination is attained, the surface is not unpinned.
引用
收藏
页码:1695 / 1697
页数:3
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