THE EFFECT OF PHOSPHORUS AND SULFUR TREATMENT ON THE SURFACE-PROPERTIES OF INP

被引：45

作者：

IYER, R ^{[1
]}

CHANG, RR ^{[1
]}

DUBEY, A ^{[1
]}

LILE, DL ^{[1
]}

机构：

[1] COLORADO STATE UNIV, DEPT ELECT ENGN, FT COLLINS, CO 80523 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584274

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1174 / 1179

页数：6

共 19 条

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[2] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[3] CHANG R, 1988, JUN EL MAT C BOULD
[4] REMOTE GATE CAPACITANCE-VOLTAGE STUDIES FOR NONINVASIVE SURFACE CHARACTERIZATION
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 987 - 989
[5] SURFACE CHARACTERIZATION OF INP USING PHOTOLUMINESCENCE
CHANG, RR
IYER, R
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1995 - 2004
[6] ARSENIC PASSIVATION OF INP SURFACE FOR METAL-INSULATOR-SEMICONDUCTOR DEVICES BASED ON BOTH ULTRAHIGH-VACUUM TECHNIQUE AND CHEMICAL PROCEDURE
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) : 257 - 260
[7] EXTREMELY RAPID OUT DIFFUSION OF SULFUR IN INP
CHIN, AK
CAMLIBEL, I
SHENG, TT
BONNER, WA
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 495 - 497
[8] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
FARROW, RFC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) : 2436 - 2448
[9] THE GROWTH AND INSITU CHARACTERIZATION OF CHEMICAL VAPOR-DEPOSITED SIO2
IYER, R
CHANG, RR
LILE, DL
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 83 (02) : 290 - 296
[10] KLOPFENSTEIN P, IN PRESS J APPL PHYS

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