GIGAHERTZ LOGIC BASED ON INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS BY VAPOR-PHASE EPITAXY

被引：2

作者：

ANTREASYAN, A

GARBINSKI, PA

MATTERA, VD

WIESENFELD, JM

TUCKER, RS

SHAH, NJ

DIGIUSEPPE, MA

机构：

[1] AT&T BELL LABS,SOLID STATE ELECTR RES LAB,MURRAY HILL,NJ 07974

[2] AT&T BELL LABS,METEROSTRUCT ICS GRP,MURRAY HILL,NJ 07974

[3] AT&T BELL LABS,CRAWFORD HILL LAB,PHOTON RES LAB,HOLMDEL,NJ 07733

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 09期

关键词：

D O I：

10.1109/T-ED.1987.23173

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1897 / 1901

页数：5

共 17 条

[1] GA0.47IN0.53 AS ULTRAHIGH GAIN, HIGH-SENSITIVITY PHOTOCONDUCTORS GROWN BY CHLORIDE VAPOR-PHASE EPITAXY
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MATTERA, VD
OLSSON, NA
TEMKIN, H
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) : 1535 - 1537
[2] HIGH-SPEED ENHANCEMENT MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS EXHIBITING VERY HIGH TRANSCONDUCTANCE
ANTREASYAN, A
GARBINSKI, PA
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TEMKIN, H
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (09) : 513 - 515
[3] HIGH-POWER INP MISFETS
ARMAND, M
BUI, DV
CHEVRIER, J
LINH, NT
[J]. ELECTRONICS LETTERS, 1983, 19 (12) : 433 - 434
[4] HENDEL RH, 1984, IEEE ELECTR DEVICE L, V5, P406, DOI 10.1109/EDL.1984.25965
[5] X-BAND SELF-ALIGNED GATE ENHANCEMENT-MODE INP MISFETS
ITOH, T
OHATA, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 811 - 815
[6] MONOLITHICALLY INTEGRATED IN0.53GA0.47AS-PIN/INP-MISFET PHOTORECEIVER
KASAHARA, K
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NOMURA, H
MATUSHITA, S
[J]. ELECTRONICS LETTERS, 1984, 20 (08) : 314 - 315
[7] INTEGRATED PINFET OPTICAL RECEIVER WITH HIGH-FREQUENCY INP-MISFET
KASAHARA, K
SUGIMOTO, M
NOMURA, H
SUZUKI, S
[J]. ELECTRONICS LETTERS, 1983, 19 (22) : 905 - 906
[8] LOW-POWER HIGH-SPEED INP MISFET DIRECT-COUPLED FET LOGIC
MESSICK, LJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) : 763 - 766
[9] GIGAHERTZ LOGIC GATES BASED ON INP-MISFETS WITH MINIMAL DRAIN CURRENT DRIFT
PANDE, KP
FATHIMULLA, MA
GUTIERREZ, D
MESSICK, L
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 407 - 409
[10] MICROWAVE PERFORMANCE OF INALAS/INGAAS/INP MODFETS
PENG, CK
AKSUN, MI
KETTERSON, AA
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GLEASON, KR
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) : 24 - 26

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