COMMENT ON MISFIT DISLOCATIONS IN ABRUPT HG1-XCDXTE HETEROJUNCTIONS

被引：7

作者：

SCHOOLAR, RB

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 01期

关键词：

D O I：

10.1116/1.572632

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：77 / 79

页数：3

共 10 条

[1] MISFIT DISLOCATIONS IN SEMICONDUCTORS [J].

HOLT, DB .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) :1053-+

[2] BACKSIDE-ILLUMINATED HGCDTE-CDTE PHOTO-DIODES [J].

LANIR, M ;

WANG, CC ;

VANDERWYCK, AHB .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :50-52

[3]

MANY A, 1965, SEMICONDUCTOR SURFAC, P150

[4] GROWTH AND PROPERTIES OF HG1-XCDXTE EPITAXIAL LAYERS [J].

NEMIROVSKY, Y ;

MARGALIT, S ;

FINKMAN, E ;

SHACHAMDIAMAND, Y ;

KIDRON, I .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) :133-153

[5]

NOVIKOVA, 1964, SOVIET PHYS SOLID ST, V5, P1558

[6]

NOVIKOVA, 1961, SOVIET PHYS SOLID ST, V3, P129

[7] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J].

OLDHAM, WG ;

MILNES, AG .

SOLID-STATE ELECTRONICS, 1964, 7 (02) :153-165

[8] HGCDTE PHOTO-DIODES FORMED BY DOUBLE-LAYER LIQUID-PHASE EPITAXIAL-GROWTH [J].

SHIN, SH ;

VANDERWYCK, AHB ;

KIM, JC ;

CHEUNG, DT .

APPLIED PHYSICS LETTERS, 1980, 37 (04) :402-404

[9]

TANSLEY TL, 1972, SEMICONDUCTORS SEMIM, V7, pCH6

[10] SOLID SOLUTION IN A-II B-VI TELLURIDES [J].

WOOLLEY, JC ;

RAY, B .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (1-2) :151-153

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