INVESTIGATION OF GAAS SURFACE-MORPHOLOGY INDUCED BY CL2 GAS REACTIVE ION-BEAM ETCHING

被引：9

作者：

SUGATA, S

ASAKAWA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 12期

关键词：

D O I：

10.1143/JJAP.22.L813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L813 / L814

页数：2

共 8 条

[1]

Asakawa K., 1983, Proceedings of the International Ion Engineering Congress. The 7th Symposium (1983 International) on Ion Sources and Ion Assisted Technology (ISIAT '83) and the 4th International Conference on Ion and Plasma Assisted Techniques (IPAT '83), P759

[2]

ASAKAWA K, 1983, JPN J APPL PHYS, V22, pL673

[3] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J].