RAMAN-SPECTRA FROM HEAT-TREATED SEMI-INSULATING GAAS

被引：14

作者：

NAKAMURA, T

USHIROKAWA, A

KATODA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 01期

关键词：

D O I：

10.1063/1.92119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：13 / 15

页数：3

共 9 条

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[7] THERMAL-CONVERSION MECHANISM IN SEMI-INSULATING GAAS [J].

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[9] CHROMIUM REDISTRIBUTION DURING THERMAL ANNEALING OF SEMI-INSULATING GAAS AS A FUNCTION OF ENCAPSULANT AND IMPLANT FLUENCE [J].

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APPLIED PHYSICS LETTERS, 1980, 36 (10) :837-840

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