ELIMINATION OF DRAIN I/V COLLAPSE IN MODFETS THROUGH THE USE OF THIN N-GAAS/ALGAAS SUPERLATTICE

被引：5

作者：

FISCHER, R

MASSELINK, WT

KLEM, J

HENDERSON, T

MORKOC, H

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 18期

关键词：

D O I：

10.1049/el:19840508

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：743 / 744

页数：2

共 6 条

[1] ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE [J].

BABA, T ;

MIZUTANI, T ;

OGAWA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L627-L629

[2]

CHAND N, 1984, UNPUB REV B

[3] ENHANCEMENT OF ELECTRON VELOCITY IN MODULATION-DOPED (AL, GA)AS GAAS-FETS AT CRYOGENIC TEMPERATURES [J].

DRUMMOND, TJ ;

SU, SL ;

LYONS, WG ;

FISCHER, R ;

KOPP, W ;

MORKOC, H ;

LEE, K ;

SHUR, MS .

ELECTRONICS LETTERS, 1982, 18 (24) :1057-1058

[4] BIAS DEPENDENCE AND LIGHT SENSITIVITY OF (AL,GA)AS/GAAS MODFETS AT 77-K [J].

DRUMMOND, TJ ;

FISCHER, RJ ;

KOPP, WF ;

MORKOC, H ;

LEE, K ;

SHUR, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) :1806-1811

[5]

FISCHER R, 1983, IEEE T ED, V31, P1028

[6] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].

LANG, DV ;

LOGAN, RA .

PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639

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