MERCURY ZINC TELLURIDE, A NEW NARROW-GAP SEMICONDUCTOR

被引:28
作者
SHER, A
EGER, D
ZEMEL, A
机构
[1] Soreq Research Cent, Solid State, Physics Dep, Yavne, Isr, Soreq Research Cent, Solid State Physics Dep, Yavne, Isr
关键词
CRYSTALS - Epitaxial Growth - ELECTRIC PROPERTIES - OPTICAL PROPERTIES;
D O I
10.1063/1.95851
中图分类号
O59 [应用物理学];
学科分类号
摘要
For the first time the growth of single crystal solid solutions of Hg//1// minus //xZn//xTe is demonstrated. Layers with compositions of x equals 0. 16 and 0. 23 having transmission cut-on wavelengths of 9. 1 and 4. 1 mu m at 80 K, respectively, were grown by liquid phase epitaxy on CdTe substrates. The optical and electrical characteristics of the epilayers are similar to those obtained for Hg//1// minus //xCd//xTe alloys.
引用
收藏
页码:59 / 61
页数:3
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