EVIDENCE FOR A DENSE ELECTRON-HOLE PLASMA CLOSE TO THE MELTING PHASE-TRANSITION IN SILICON

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[2] DUAL-WAVELENGTH LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1979, 34 (09) : 558 - 560

[3] BELL AE, 1979, RCA REV, V40, P294

[4] Gamo K., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P97

[5] CALCULATION OF CARRIER AND LATTICE TEMPERATURES INDUCED IN SI BY PICOSECOND LASER-PULSES [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 624 - 626

[6] COMPUTER MODELING OF THE TEMPERATURE RISE AND CARRIER CONCENTRATION INDUCED IN SILICON BY NANOSECOND LASER-PULSES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3207 - 3213

[7] PHASE-TRANSFORMATION ON AND CHARGED-PARTICLE EMISSION FROM A SILICON CRYSTAL-SURFACE, INDUCED BY PICOSECOND LASER-PULSES [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 755 - 757

[8] PICOSECOND TIME-RESOLVED PLASMA AND TEMPERATURE-INDUCED CHANGES OF REFLECTIVITY AND TRANSMISSION IN SILICON [J]. APPLIED PHYSICS LETTERS, 1982, 41 (07) : 643 - 646

[9] LIU JM, 1982, NOV MRS S A BOST

[10] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1604 - 1607

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[2] DUAL-WAVELENGTH LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1979, 34 (09) : 558 - 560

[3] BELL AE, 1979, RCA REV, V40, P294

[4] Gamo K., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P97

[5] CALCULATION OF CARRIER AND LATTICE TEMPERATURES INDUCED IN SI BY PICOSECOND LASER-PULSES [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 624 - 626

[6] COMPUTER MODELING OF THE TEMPERATURE RISE AND CARRIER CONCENTRATION INDUCED IN SILICON BY NANOSECOND LASER-PULSES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3207 - 3213

[7] PHASE-TRANSFORMATION ON AND CHARGED-PARTICLE EMISSION FROM A SILICON CRYSTAL-SURFACE, INDUCED BY PICOSECOND LASER-PULSES [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 755 - 757

[8] PICOSECOND TIME-RESOLVED PLASMA AND TEMPERATURE-INDUCED CHANGES OF REFLECTIVITY AND TRANSMISSION IN SILICON [J]. APPLIED PHYSICS LETTERS, 1982, 41 (07) : 643 - 646

[9] LIU JM, 1982, NOV MRS S A BOST

[10] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1604 - 1607