EFFECT OF BA ON THE OXIDATION OF THE SI(100) SURFACE

被引:12
作者
FAN, WC [1 ]
IGNATIEV, A [1 ]
机构
[1] UNIV HOUSTON, CTR SPACE VACUUM EPITAXY, HOUSTON, TX 77204 USA
关键词
D O I
10.1103/PhysRevB.44.3110
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Si oxidation in the Ba/Si(110) system has been studied by Auger-electron spectroscopy (AES) and low-energy electron diffraction as a function of Ba and oxygen exposure. The rate of the Si oxidation under elevated temperatures has been shown to be significantly enhanced by monolayer (ML) amounts of Ba. Under very high Ba exposures (almost-equal-to 4 ML), the Si oxidation in the Ba/Si(100) system was, however, promoted more rapidly at room temperature than at 700-degrees-C. AES data have also shown the formation of Ba silicide after Ba exposures of > 1 ML and anneal to about 600-degrees-C.
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页码:3110 / 3114
页数:5
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