GAAS ALXGA1-X AS DEPLETION STOP PHOTO-TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY

[1] DESIGN AND EVALUATION OF A PLANAR GAALAS-GAAS BIPOLAR-TRANSISTOR [J]. ELECTRONICS LETTERS, 1980, 16 (01) : 41 - 42

[2] ARMSTRONG HL, 1959, IEEE T ELECTRON DEVI, V6, P1

[3] GAALAS-GAAS HETEROJUNCTION MICROWAVE BIPOLAR-TRANSISTOR [J]. ELECTRONICS LETTERS, 1981, 17 (08) : 301 - 302

[4] CHEN CY, 1981, IIA2 DEV RES C PAP

[5] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[6] GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH-FREQUENCY OPERATION [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1339 - +

[7] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537

[8] ELECTRICAL BEHAVIOR OF AN NPN GAA1AS-GAAS HETEROJUNCTION TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1979, 22 (06) : 549 - 557

[9] MILANO RA, 1978, THESIS U ILLINOIS UR

[10] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 72 - 78

[1] DESIGN AND EVALUATION OF A PLANAR GAALAS-GAAS BIPOLAR-TRANSISTOR [J]. ELECTRONICS LETTERS, 1980, 16 (01) : 41 - 42

[2] ARMSTRONG HL, 1959, IEEE T ELECTRON DEVI, V6, P1

[3] GAALAS-GAAS HETEROJUNCTION MICROWAVE BIPOLAR-TRANSISTOR [J]. ELECTRONICS LETTERS, 1981, 17 (08) : 301 - 302

[4] CHEN CY, 1981, IIA2 DEV RES C PAP

[5] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[6] GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH-FREQUENCY OPERATION [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1339 - +

[7] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537

[8] ELECTRICAL BEHAVIOR OF AN NPN GAA1AS-GAAS HETEROJUNCTION TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1979, 22 (06) : 549 - 557

[9] MILANO RA, 1978, THESIS U ILLINOIS UR

[10] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 72 - 78