PHOTOEMISSION-STUDY OF THE REACTIVE PD/INP(110) INTERFACE

被引：18

作者：

KENDELEWICZ, T

LIST, RS

BERTNESS, KA

WILLIAMS, MD

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583498

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：959 / 965

页数：7

共 38 条

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[2] CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION [J].

BRILLSON, LJ ;

BRUCKER, CF ;

KATNANI, AD ;

STOFFEL, NG ;

MARGARITONDO, G .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :784-786

[3] FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES [J].

BRILLSON, LJ ;

BRUCKER, CF ;

KATNANI, AD ;

STOFFEL, NG ;

DANIELS, R ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :564-569

[4]

BRILLSON LJ, 1986, HDB SYNCHROTRON RAD, V2

[5] ELECTRONIC PROPERTIES OF SILICON-TRANSITION METAL INTERFACE COMPOUNDS [J].

Calandra, C. ;

Bisi, O. ;

Ottaviani, G. .

SURFACE SCIENCE REPORTS, 1985, 4 (5-6) :271-364

[6]

CARDONA M, 1978, PHOTOEMISSION SOLIDS, V1, P60

[7] PHOTOIONIZATION FROM OUTER ATOMIC SUBSHELLS - MODEL STUDY [J].

COOPER, JW .

PHYSICAL REVIEW, 1962, 128 (02) :681-&

[8]

EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656

[9]

GELLATT CD, 1983, PHYS REV B, V27, P2005

[10] METAL-ANION BOND STRENGTH AND ROOM-TEMPERATURE DIFFUSION AT METAL/GAAS INTERFACES - TRANSITION VERSUS RARE-EARTH VERSUS AU METAL OVERLAYERS [J].

GRIONI, M ;

JOYCE, JJ ;

WEAVER, JH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1986, 4 (03) :965-968

← 1 2 3 4 →