PHOTOASSISTED DEPOSITION PROCESS

被引：2

作者：

NISHIZAWA, JI

机构：

[1] Tohoku Univ, Japan

来源：

THIN SOLID FILMS | 1988年 / 163卷

关键词：

D O I：

10.1016/0040-6090(88)90419-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：149 / 156

页数：8

共 16 条

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[5] PHOTOEXCITATION EFFECTS ON THE GROWTH-RATE IN THE VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS [J].

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[6] MOLECULAR LAYER EPITAXY [J].

NISHIZAWA, J ;

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[7]

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