ULTRAVIOLET-IRRADIATION EFFECT ON THE MBE GROWTH OF ZNSE/GAAS OBSERVED BY RHEED

被引：12

作者：

OHISHI, M

SAITO, H

TORIHARA, H

FUJISAKI, Y

OHMORI, K

机构：

[1] Department of Applied Physics, Faculty of Science, Okayama University of Science, Okayama, 700

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91083-M

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ultraviolet light irradiation effects on the MBE growth of ZnSe/GaAs(001) were investigated by means of RHEED observation. One of the prominent effects induced by the UV irradiation is to enhance the desorption of Se molecules. The other is that the decay of the RHEED oscillations becomes faster. These results imply the enhanced possibility of three-dimensional growth, which leads to the inferior surface morphology of the ZnSe/GaAs epilayers grown under photo-irradiation. Possible speculation on photo-MBE growth mechanisms is also given.

引用

页码：792 / 796

页数：5

共 8 条

[1] PARA-TYPE CDTE EPILAYERS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J].