VERTICAL SILICON MEMBRANE ARRAYS PATTERNED WITH TRI-LEVEL E-BEAM RESIST

被引：2

作者：

HU, EL

TENNANT, DM

HOWARD, RE

JACKEL, LD

GRABBE, P

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1982年 / 11卷 / 05期

关键词：

D O I：

10.1007/BF02658903

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：883 / 888

页数：6

共 6 条

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[2]

GOLDSTEIN IS, 1981, J VAC SCI TECH, V19, P734

[3] 400-A LINEWIDTH E-BEAM LITHOGRAPHY ON THICK SILICON SUBSTRATES [J].

HOWARD, RE ;

HU, EL ;

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TENNANT, DM .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :592-594

[4] 50-NM SILICON STRUCTURES FABRICATED WITH TRILEVEL ELECTRON-BEAM RESIST AND REACTIVE-ION ETCHING [J].

JACKEL, LD ;

HOWARD, RE ;

HU, EL ;

TENNANT, DM ;

GRABBE, P .

APPLIED PHYSICS LETTERS, 1981, 39 (03) :268-270

[5] HIGH-RESOLUTION, STEEP PROFILE RESIST PATTERNS [J].

MORAN, JM ;

MAYDAN, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1620-1624

[6] 25 NM FEATURES PATTERNED WITH TRILEVEL E-BEAM RESIST [J].

TENNANT, DM ;

JACKEL, LD ;

HOWARD, RE ;

HU, EL ;

GRABBE, P ;

CAPIK, RJ ;

SCHNEIDER, BS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1304-1307

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