STRUCTURAL STUDIES OF GA-ADSORBED SI(111) SQUARE-ROOT 3 X SQUARE-ROOT 3 SURFACES BY LOW-ENERGY ELECTRON-DIFFRACTION

被引：9

作者：

KAWAZU, A

YOKOHAMA, I

SUZUKI, H

OHSAKI, A

TAKEUCHI, K

SAKAMA, H

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.36.9809

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9809 / 9811

页数：3

共 11 条

[1] ROOM-TEMPERATURE ADSORPTION AND GROWTH OF GA AND IN ON CLEAVED SI(111) [J].

BOLMONT, D ;

CHEN, P ;

SEBENNE, CA ;

PROIX, F .

SURFACE SCIENCE, 1984, 137 (01) :280-292

[2]

Heinz T., 1995, LOW ENERGY ELECTRON, V14, P1421

[3] STRUCTURE-ANALYSIS OF SI(111)2X1 WITH LOW-ENERGY ELECTRON-DIFFRACTION [J].

HIMPSEL, FJ ;

MARCUS, PM ;

TROMP, R ;

BATRA, IP ;

COOK, MR ;

JONA, F ;

LIU, H .

PHYSICAL REVIEW B, 1984, 30 (04) :2257-2259

[4]

KAWAZU A, 1980, 4TH P INT C SOL SURF, V2, P1015

[5] SURFACE REACTIONS OF SILICON WITH ALUMINUM AND WITH INDIUM [J].

LANDER, JJ ;

MORRISON, J .

SURFACE SCIENCE, 1964, 2 :553-565

[6] STRUCTURAL STUDIES OF SI(111)2X1 SURFACES USING LOW-ENERGY ELECTRON-DIFFRACTION [J].

SAKAMA, H ;

KAWAZU, A ;

UEDA, K .

PHYSICAL REVIEW B, 1986, 34 (02) :1367-1370

[7] MILK STOOL MODEL FOR SI(111) SURFACE RECONSTRUCTION [J].

SNYDER, LC ;

WASSERMAN, Z ;

MOSKOWITZ, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1266-1269

[8] VACANCY-BUCKLING MODEL FOR THE (2X2) GAAS(111) SURFACE [J].

TONG, SY ;

XU, G ;

MEI, WN .

PHYSICAL REVIEW LETTERS, 1984, 52 (19) :1693-1696

[9]

van Hove M.A., 1979, SURFACE CRYSTALLOGRA

[10] ATOMIC-STRUCTURE OF SI[001]2X1 [J].

YANG, WS ;

JONA, F ;

MARCUS, PM .

PHYSICAL REVIEW B, 1983, 28 (04) :2049-2059

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