ELECTRONIC AND OPTICAL-PROPERTIES OF P-TYPE AMORPHOUS-SILICON AND WIDE BAND-GAP AMORPHOUS-SILICON CARBIDE FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION

被引：22

作者：

INOUE, T

TANAKA, T

KONAGAI, M

TAKAHASHI, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 09期

关键词：

D O I：

10.1063/1.94962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：871 / 873

页数：3

共 12 条

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[8]

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[9] OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION [J].

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[10]

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