HYDROSTATIC-PRESSURE EFFECT ON SURFACE PHOTOVOLTAGE OF GAAS

被引：8

作者：

LAGOWSKI, J ^{[1
]}

ILLER, A ^{[1
]}

SWIATEK, A ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS,AL LOTNIKOW 32-46,02-668 WARSAW,POLAND

来源：

SURFACE SCIENCE | 1975年 / 49卷 / 01期

关键词：

D O I：

10.1016/0039-6028(75)90323-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1 / 8

页数：8

共 14 条

[1]

BUJNOWSKI W, 1973, PRIB TEKH EKSP, V16, P224

[2] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J].

CAMPHAUSEN, DL ;

CONNELL, GAN ;

PAUL, W .

PHYSICAL REVIEW LETTERS, 1971, 26 (04) :184-+

[3]

DIMTRUK NL, 1970, FIZ TEKH POLUPROVODN, V4, P663

[4] INVESTIGATION OF SURFACE RECOMBINATION ON EPITAXIAL GAAS FILMS [J].

DMITRUK, NL ;

LYASHENK.VI ;

TERESHEN.AK ;

SPEKTOR, SA .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (01) :53-62

[5] SURFACE PHOTOVOLTAGE SPECTROSCOPY - NEW APPROACH TO STUDY OF HIGH-GAP SEMICONDUCTOR SURFACES [J].

GATOS, HC ;

LAGOWSKI, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01) :130-135

[6] SURFACE PHOTOVOLTAGE SPECTROSCOPY AND SURFACE PIEZOELECTRIC EFFECT IN GAAS [J].

LAGOWSKI, J ;

BALTOV, I ;

GATOS, HC .

SURFACE SCIENCE, 1973, 40 (02) :216-226

[7] ELECTRONIC CHARACTERISTICS OF REAL CDS SURFACES [J].

LAGOWSKI, J ;

GATOS, HC ;

BALESTRA, CL .

SURFACE SCIENCE, 1972, 29 (01) :213-&

[8]

Lashkarev V. E., 1969, Ukrayins'kyi Fizychnyi Zhurnal, V14, P363

[9]

Many A, 1971, SEMICONDUCTOR SURFAC

[10]

MORAWSKI A, TO BE PUBLISHED

← 1 2 →