TWO-DIMENSIONAL MODELING OF HIGH-SPEED BIPOLAR-TRANSISTORS AT HIGH-CURRENT DENSITIES USING THE INTEGRAL CHARGE-CONTROL RELATION

被引:2
作者
SCHROTER, M
REIN, HM
机构
来源
PHYSICA B & C | 1985年 / 129卷 / 1-3期
关键词
D O I
10.1016/0378-4363(85)90596-0
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:332 / 336
页数:5
相关论文
共 12 条
[1]  
GETREU IE, 1982, MODELING BIPOLAR TRA
[3]   A CHARGE CONTROL RELATION FOR BIPOLAR TRANSISTORS [J].
GUMMEL, HK .
BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (01) :115-+
[4]   AN INTEGRAL CHARGE CONTROL MODEL OF BIPOLAR TRANSISTORS [J].
GUMMEL, HK ;
POON, HC .
BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (05) :827-+
[5]   A TIME-DIVISION MULTIPLEXER IC FOR BIT RATES UP TO ABOUT 2 GBITS/S [J].
REIN, HM ;
DANIEL, D ;
DERKSEN, RH ;
LANGMANN, U ;
BOSCH, BG .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1984, 19 (03) :306-310
[6]  
REIN HM, 1983, SOLIDST ELECTRON, V16, P929
[7]  
REIN HM, 1983, SOLID STATE ELECTRON, V16, P75
[8]  
REIN HM, UNPUB VERIFICATION I
[9]  
REIN HM, 1984, UNPUB SOLID STATE EL, V17
[10]  
STUBING H, UNPUB COMPACT PHYSIC