EMPIRICAL FIT TO BAND DISCONTINUITIES AND BARRIER HEIGHTS IN III-V ALLOY SYSTEMS

被引：181

作者：

TIWARI, S

FRANK, DJ

机构：

[1] IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.106575

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a figure summarizing the variation of conduction band discontinuity, valence band discontinuity, and gold Schottky barrier height for binary and ternary III-V semiconductors. This figure, which applies to unstrained material, makes use of the property of transitivity in band alignments, and the observed experimental correlation between barrier heights and band gap discontinuities, to consolidate a wide range of data. The figure should be very useful in the design of novel heterostructure clectronic and optical devices.

引用

页码：630 / 632

页数：3

共 15 条

[1] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION [J].