GROWTH OF GAAS AND INP ON SI USING PLASMA STIMULATED MOCVD

被引：4

作者：

LEIBER, J ^{[1
]}

BRAUERS, A ^{[1
]}

HEINECKE, H ^{[1
]}

LUTH, H ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] AACHEN TECH UNIV,INST PHYS 2,D-5100 AACHEN,FED REP GER

来源：

关键词：

D O I：

10.1016/0022-0248(89)90042-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：483 / 489

页数：7

共 38 条

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