DETERMINATION OF LOW-LEVELS OF CARBON IN CZOCHRALSKI SILICON

被引：12

作者：

OATES, AS

NEWMAN, RC

WOOLLEY, R

DAVIES, G

LIGHTOWLERS, EC

BINNS, MJ

WILKES, JG

机构：

[1] UNIV LONDON KINGS COLL, DEPT PHYS, LONDON WC2R 2LS, ENGLAND

[2] MULLARD SOUTHAMPTON, SOUTHAMPTON SO9 7BH, ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.96065

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：705 / 707

页数：3

共 12 条

[1] INTERSTITIAL DEFECTS INVOLVING CARBON IN IRRADIATED SILICON [J].

BROZEL, MR ;

NEWMAN, RC ;

TOTTERDELL, DHJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (02) :243-248

[2]

CHENG LJ, 1969, J APPL PHYS, V40, P1679, DOI 10.1063/1.1657265

[3]

Davies G., 1985, Thirteenth International Conference on Defects in Semiconductors, P725

[4] CARBON IN RADIATION-DAMAGE CENTERS IN CZOCHRALSKI SILICON [J].

DAVIES, G ;

LIGHTOWLERS, EC ;

WOOLLEY, R ;

NEWMAN, RC ;

OATES, AS .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (19) :L499-L503

[5]

DAVIES G, 1985, J PHYS C SOLID STATE, V18, pR20

[6]

DAVIES G, 1984, SOLID STATE COMMUN, V50, P1957

[7] INTERSTITIAL DEFECTS INVOLVING BORON IN IRRADIATED SILICON [J].

LAITHWAITE, K ;

NEWMAN, RC ;

TOTTERDELL, DHJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (02) :236-242

[8]

Newman R. C., 1971, Radiation Effects, V8, P189, DOI 10.1080/00337577108231028

[9] PHOTOLUMINESCENCE FROM SI IRRADIATED WITH 1.5-MEV ELECTRONS AT 100DEGREESK [J].

NOONAN, JR ;

KIRKPATRICK, CG ;

STREETMAN, BG .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3010-3015

[10] CARBON AND OXYGEN ISOTOPE EFFECTS IN THE 0.79 EV DEFECT PHOTOLUMINESCENCE SPECTRUM IN IRRADIATED SILICON [J].

THONKE, K ;

WATKINS, GD ;

SAUER, R .

SOLID STATE COMMUNICATIONS, 1984, 51 (03) :127-130

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