CARBON AND OXYGEN ISOTOPE EFFECTS IN THE 0.79 EV DEFECT PHOTOLUMINESCENCE SPECTRUM IN IRRADIATED SILICON

被引：46

作者：

THONKE, K

WATKINS, GD

SAUER, R

机构：

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 51卷 / 03期

关键词：

D O I：

10.1016/0038-1098(84)90532-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：127 / 130

页数：4

共 23 条

[1] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON [J].

BROWER, KL .

PHYSICAL REVIEW B, 1974, 9 (06) :2607-2617

[2] CIRCUITS TO ELIMINATE THE VOLTAGE SPIKES CAUSED BY COSMIC-RAYS IN GERMANIUM PIN-DIODE INFRARED DETECTORS [J].

COLLINS, AT ;

JEFFRIES, T .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1982, 15 (07) :712-716

[3] ISOTOPE EFFECTS ON THE 969 MEV VIBRONIC BAND IN SILICON [J].

DAVIES, G ;

DOCARMO, MC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (23) :L687-L691

[4] CARBON-RELATED VIBRONIC BANDS IN ELECTRON-IRRADIATED SILICON [J].

DAVIES, G ;

LIGHTOWLERS, EC ;

DOCARMO, M .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (28) :5503-5515

[5] UNIAXIAL-STRESS ANALYSIS OF THE 0.79 EV VIBRONIC BAND IN IRRADIATED SILICON [J].

FOY, CP .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (09) :2059-2067

[6] OPTICAL STUDIES OF VIBRONIC BANDS IN SILICON [J].

FOY, CP .

PHYSICA B & C, 1983, 116 (1-3) :276-280

[7] TEMPERATURE DEPENDENCE OF VIBRONIC SPECTRA IN IRRADIATED SILICON [J].

HARE, APG ;

DAVIES, G ;

COLLINS, AT .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (11) :1265-+

[8] INFRARED ABSORPTION OF OXYGEN IN SILICON [J].

HROSTOWSKI, HJ ;

KAISER, RH .

PHYSICAL REVIEW, 1957, 107 (04) :966-972

[9] EVIDENCE FOR INTERNAL ROTATION IN THE FINE STRUCTURE OF THE INFRARED ABSORPTION OF OXYGEN IN SILICON [J].

HROSTOWSKI, HJ ;

ALDER, BJ .

JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (04) :980-990

[10]

Jones C. E., 1971, Radiation Effects, V9, P83, DOI 10.1080/00337577108242037

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