THEORETICAL CALCULATIONS OF DEBYE LENGTH, BUILT-IN POTENTIAL AND DEPLETION LAYER WIDTH VERSUS DOPANT DENSITY IN A HEAVILY DOPED P-N-JUNCTION DIODE

被引：17

作者：

TENG, KW

LI, SS

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 03期

关键词：

D O I：

10.1016/0038-1101(85)90007-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：277 / 285

页数：9

共 11 条

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