RADIATION-INDUCED HOLE TRAPPING AND INTERFACE STATE CHARACTERISTICS OF AL-GATE AND POLY-SI GATE MOS CAPACITORS

被引：20

作者：

SHANFIELD, Z

MORIWAKI, MM

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/TNS.1985.4334045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3929 / 3934

页数：6

共 21 条

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