PHOTON-EMISSION FROM REVERSE-BIASED SILICON P-N-JUNCTIONS

被引：29

作者：

GAUTAM, DK ^{[1
]}

KHOKLE, WS ^{[1
]}

GARG, KB ^{[1
]}

机构：

[1] UNIV RAJASTHAN,DEPT PHYS,JAIPUR 302004,RAJASTHAN,INDIA

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 02期

关键词：

D O I：

10.1016/0038-1101(88)90130-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTOR DEVICES

引用

页码：219 / 222

页数：4

共 15 条

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