PHOTOELECTRIC APPLICATION OF A-SI-H AND RELATED MATERIAL-IMAGE DEVICES

被引：29

作者：

SHIMIZU, I

机构：

[1] Tokyo Inst of Technology, Yokohama, Jpn, Tokyo Inst of Technology, Yokohama, Jpn

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

D O I：

10.1016/0022-3093(85)90911-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1363 / 1372

页数：10

共 31 条

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[3]

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[4]

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[6]

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[7]

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[8] PHOTOCONDUCTIVE IMAGING USING HYDROGENATED AMORPHOUS SILICON FILM [J].

IMAMURA, Y ;

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HIRAI, T ;

MARUYAMA, E .

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[9] ELECTRONIC AND OPTICAL-PROPERTIES OF P-TYPE AMORPHOUS-SILICON AND WIDE BAND-GAP AMORPHOUS-SILICON CARBIDE FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION [J].

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[10]

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