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THRESHOLD VARIATIONS IN DIODE-LASERS INDUCED BY EXTERNAL RESONATOR FEEDBACK

被引：3
作者：
GOODWIN, JC
GARSIDE, BK
机构：
[1] MCMASTER UNIV,DEPT ELECT ENGN,HAMILTON L8S 4L8,ONTARIO,CANADA
[2] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON L8S 4L8,ONTARIO,CANADA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 10期
关键词：
D O I：
10.1109/JQE.1983.1071760
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1492 / 1495
页数：4
相关论文
共 5 条
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GOODWIN, JC ;
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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :1068-1073
[2]   CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].
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[4]   CALCULATED SPONTANEOUS EMISSION FACTOR FOR DOUBLE-HETEROSTRUCTURE INJECTION-LASERS WITH GAIN-INDUCED WAVEGUIDING [J].
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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) :566-570
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