INSITU IMPLANTATION AND SIMS ANALYSIS OF D IN SI AND NBV USING AN ION MICROPROBE

被引：9

作者：

LOXTON, CM ^{[1
]}

LADNA, B ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT MET,URBANA,IL 61801

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 15卷 / 1-6期

关键词：

D O I：

10.1016/0168-583X(86)90287-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：210 / 213

页数：4

共 19 条

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[4]

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[6]

GNASER H, 1983, NUCL INSTRUM METHODS, V218, P312, DOI 10.1016/0167-5087(83)90997-3

[7]

KATZ W, 1982, MICROBEAM ANAL, P215

[8]

LADNA B, ACTA METALL

[9] ION-IMPLANTATION FOR INSITU QUANTITATIVE ION MICROPROBE ANALYSIS [J].

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MORRISON, GH .

ANALYTICAL CHEMISTRY, 1980, 52 (02) :277-280

[10] HYDROGEN-ION IMPLANTATION PROFILES AS DETERMINED BY SIMS [J].

MAGEE, CW ;

WU, CP .

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